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 TLP668J
TOSHIBA Photocoupler GaAAs Ired & Photo-Triac
TLP668J
Unit in mm
Office Machine. Household Use Equipment. Triac Driver. Solid State Relay.
The TOSHIBA TLP668J consists of a zero voltage crossing turn-on
photo-triac optically coupled to a GaAAs infrared emitting diode in a six lead plastic DIP package.
* Peak off-state voltage: 600V (min.) * Trigger LED current: 3mA (max.) * On-state current: 100mA(max.) * Isolation voltage: 5000Vrms (min.) * UL recognized: UL1577, file No.E67349 JEDEC EIAJ TOSHIBA Weight: 0.44g 11-9A2
Pin Configuration (top view)
1 2 3 ZC 4 6
1 : Anode 2 : Cathode 3 : NC 4 : Terminal 1 6 : Terminal 2 (Z, C, : Zero-cross Circuit)
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TLP668J
Maximum Ratings (Ta = 25C)
Characteristic Forward current Forward current derating (Ta = 25C) LED Peak forward current (100s pulse, 100pps) Reverse voltage Junction temperature Off-state output terminal voltage On-state RMS current Detector Ta = 25C Ta = 70C Symbol IF IF / C IFP VR Tj VDRM IT(RMS) IT / C ITP ITSM Tj Tstg Topr Tsold (Note 1) BVS Rating 30 -0.3 1 5 125 600 100 50 -1.1 2 1.2 110 -55~150 -40~100 260 5000 Unit mA mA / C A V C V mA mA / C A A C C C C Vrms
On-state current derating (Ta = 25C) Peak on-state current (100s pulse, 120pps) Peak nonrepetitive surge current (PW = 10ms, DC = 10%) Junction temperature
Storage temperature range Operating temperature range Lead soldering temperature (10sec.) Isolation voltage (AC, 1min., R.H. 60%)
(Note 1): Device considered a two terminal device: Pins1,2 and 3 shorted together and pins 4 and 6 shorted together.
Individual Electrical Characteristics (Ta = 25C)
Characteristic Forward voltage LED Reverse current Capacitance Peak off-state current Peak on-state voltage Detector Holding current Critical rate of rise of off-state voltage Critical rate of rise of commutating voltage Symbol VF IR CT IDRM VTM IH dv / dt dv / dt(c) IF = 10mA VR = 3 V V = 0, f = 1MHz VDRM = 600V ITM = 100mA Vin = 240rms Ta = 85C Vin = 60Vrms IT = 15mArms Test Condition Min. 1.2 Typ. 1.4 30 10 0.2 500 0.2 Max. 1.7 10 1000 3.0 Unit V A pF nA V mA V/s V/s
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TLP668J
Coupled Electrical Characteristics (Ta = 25C)
Characteristics Trigger LED current Inhibit voltage Leakage in inhibited state Capacitance input to output Isolation resistance Symbol IFT VIH IIH CS RS Test Condition VT = 6V, resistive load IF = rated IFT IF = rated IFT VT = rated VDRM VS = 0, f = 1MHz VS = 500V, R.H. 60% AC, 1 minute Isolation voltage BVS AC, 1 second(in oil) DC, 1 minute(in oil) Min. 5x10
10
Typ. 0.8 10
14
Max. 3 50 600
Unit mA V A pF Vrms Vdc
5000
10000 10000
Recommended Operating Conditions
Characteristic Supply voltage Forward current Peak on-state current Operating temperature Symbol VAC IF ITP Topr Min. 4.5 -10 Typ. 6 Max. 240 7.5 1 85 Unit Vac mA A C
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TLP668J
IF - Ta
100 -4.0 -3.6 -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 0 -20 0 20 40 60 80 100 0.1 0.3 0.5
VF / Ta - IF
80
60
40
20
Forward voltage temperature coefficient VF / Ta (mV / C)
Allowable forward current IF (mA)
1
3
5
10
30
Ambient temperature Ta (C)
Forward current
IF
(mA)
IF - VF
100 Ta = 25C 5000 3000
IFP - DR
Pulse width 100 s Ta = 25C
(mA)
(mA) IFP
1000 500 300
50 30
Forward current IF
10 5 3
Pulse forward current
100 50 30
1 1.0
1.2
1.4
1.6
1.8
2.0
2.2
10 3
10-3
3
10-2
3
10-1
3
100
Forward voltage
VF
(V)
Duty cycle ratio DR
IT(RMS) - Ta
120
100
R.m.s. on-state current IT(RMS) (mA)
80
60
40
20
0 -20
0
20
40
60
80
100
120
Ambient temperature Ta (C)
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2002-09-25
TLP668J
Normalized IFT - Ta
3 2 VT = 6 V 3 2
Normalized IH - Ta
Trigger LED current ift (arbitrary unit)
0.5
Holding current IH (arbitrary unit)
20 40 60 80 100
1.2 1
1.2 1
0.5
0.3
0.3
0.1 -40
-20
0
0.1 -40
-20
0
20
40
60
80
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Normalized IDRM - Ta
103 VDRM = rated 1.4
Normalized IDRM - Ta
102
Off-state output terminal voltage VDRM (Arbitrary Unit)
20 40 60 80 100
Peak off-state current IDRM (Arbitrary Unit)
1.2
1.0
0.8
101
0.6
0.4
100 0 0.2 -40
-20
0
20
40
60
80
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Normalized VIH - Ta
3 2 3 2
Normalized IIH - Ta
Inhibit voltage VIH (arbitrary unit)
0.5
Inhibit current IIH (arbitrary unit)
1.2 1
1.2 1
0.5
0.3
0.3
IF = rated IFT VT = rated VDRM
IF = rated IFT
0.1 -40
-20
0
20
40
60
80
100
0.1 -40
-20
0
20
40
60
80
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
5
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TLP668J
RESTRICTIONS ON PRODUCT USE
000707EAC
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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2002-09-25


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